Abstract:
Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime q 1 , where q is the acoustic wavenumber and is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density AE o , on 1 d ( d is the electron drift velocity and s v is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, ωq , wavenumber q, temperature T and the electron-phonon interactions parameter, ∆ . When 1 d ,AE z o decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when 1 d , AE o rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T = 300 K . However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification
