Thermoelectric amplification of phonons in graphene

dc.contributor.author	Dompreh, K. A.
dc.contributor.author	Mensah, N. G.
dc.contributor.author	Mensah, S. Y.
dc.contributor.author	Fosuhene, S. K.
dc.date.accessioned	2021-10-29T09:29:02Z
dc.date.available	2021-10-29T09:29:02Z
dc.date.issued	2016-07-07
dc.identifier.issn	23105496
dc.identifier.uri	http://hdl.handle.net/123456789/6319
dc.description	5p:, ill.	en_US
dc.description.abstract	Amplification of acoustic in-plane phonons due to an external temperature gradient (rT) in single-layer graphene (SLG) was studied theoretically. The threshold temperature gradient ðrTÞ g 0 and the threshold voltage ðVTÞ g 0 in SLG were evaluated. For T ¼ 77 K, the calculated value fo ðrTÞ ¼ 746:8 K=cm and ðVTÞ ¼ 6:6 mV. The calculation was done in the hypersound regime. Further, the dependence of the normalized amplification ðC=C0Þ on the frequency xq and rT=T were evaluated numerically and presented graphically. The calculated threshold temperaturegradient ðVTÞ g 0 for SLG was higher than that obtained for homogeneous semiconductors ( n-InSb) ðrTÞ hom 103 K=cm, superlattices ðrTÞ SL 0384 K=cm, and cylindrical quantum wire ðrTÞ cqw 102 K=cm. This makes SLG a much better material for thermoelectric phonon	en_US
dc.language.iso	en	en_US
dc.publisher	University of Cape Coast	en_US
dc.title	Thermoelectric amplification of phonons in graphene	en_US
dc.type	Article	en_US