Induced hall-like current by acoustic phonons in semiconductor fluorinated carbon nanotube

Abstract

We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime q 1 (q is the modulus of the acoustic wavevector and  is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, ωq , the temperature,T, the overlapping integral, ∆ , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time τ does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For 12 10 Hz And 6 2H = 10 Wb m , the Hall-like current is 2 0.09 A cm AMEy−= ⋅ in the absence of an electric field and 20.90 A cm AME y−= ⋅ in the presence of an electric field at 300 K. Similarly, the surface electric field ESAME due to the Hall-like current is ESAME = 0.21 V m in the absence of an external electric field. In the presence of an external electric field, max E = +0.74 V m and min ESAME = −0.77 V m for 6 2 H = × 10 Wb m at 300 K. q and ∆ can be used to tune the Hall-like current and ESAME of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering