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Laser induced resistivity of chiral single wall carbon nanotubes

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dc.contributor.author Twum, Anthony
dc.contributor.author Mensah, Samuel Yeboah
dc.contributor.author Edziah, Raymond
dc.contributor.author Arthur, Augustine
dc.date.accessioned 2021-10-25T09:24:58Z
dc.date.available 2021-10-25T09:24:58Z
dc.date.issued 2020-07-10
dc.identifier.issn 23105496
dc.identifier.uri http://hdl.handle.net/123456789/6221
dc.description 8p:, ill. en_US
dc.description.abstract Using the Boltzmann transport equation within the semi-classical approximation with constant relaxation time, we theoretically studied the dynamics of electrons in chiral single wall nanotubes (SWNTs)subjected to a temperature gradient (∇T)in the presence of a combined direct current and high frequency alternating fields. We obtained an expression for the resistivity (ρc) of the SWNTs which varies with temperature and depends among others on material’s chiral angle (θh), dc field strength (Eo) and ac field amplitude (Es). Our results show that chiral SWNTs exhibit metallic behavior with resistivity increasing approximately linearly with temperature over a wide temperature range well above 100 K. Based on the low chiral resistivity obtained for the SWNTs at room temperatures, we propose these materials as good candidates for possible optoelectronic applications en_US
dc.language.iso en en_US
dc.publisher University of Cape Coast en_US
dc.subject Chiral single wall nanotubes en_US
dc.subject Boltzmann transport equation en_US
dc.subject Circumferential current density en_US
dc.title Laser induced resistivity of chiral single wall carbon nanotubes en_US
dc.type Article en_US


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