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Nonlinear acoustoelectric effect in a semiconductor superlattice

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dc.contributor.author Mensah, S Y
dc.contributor.author Ahllotey, F.K.A
dc.contributor.author Mensah, N.G.
dc.date.accessioned 2021-10-26T08:29:21Z
dc.date.available 2021-10-26T08:29:21Z
dc.date.issued 1999
dc.identifier.issn 23105496
dc.identifier.uri http://hdl.handle.net/123456789/6257
dc.description 9p:, ill. en_US
dc.description.abstract The acoustoelectric effect in a semiconductor superlattice (SL) has been studied for a hypersound in the region ql 1 (where q is the acoustic wave number and l is the electron mean free path). A nonlinear dependence of the acoustoelectric current j ac on the constant electric field E is observed. It is noted that when the electric field is negative the current j ac rises, reaches a peak and falls off. On the other hand, when the electric field is positive the current decreases, reaches a minimum and then rises. A similar observation has been noted for an acoustoelectric interaction in a multilayered structure resulting from the analysis of Si/SiO2 structure. The dominant mechanism for such a behaviour is attributed to the periodicity of the energy spectrum along the SL axis en_US
dc.language.iso en en_US
dc.publisher University of Cape Coast en_US
dc.title Nonlinear acoustoelectric effect in a semiconductor superlattice en_US
dc.type Article en_US


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