Propagation of ultrasonic waves in bulk gallium nitride (gan) semiconductor in the presence of high-frequency electric field

dc.contributor.author	Mensah, S.Y.
dc.contributor.author	Mensah, N.G.
dc.contributor.author	Elloh, V.W.
dc.contributor.author	Banini, G.K.
dc.contributor.author	Sam, Frederick
dc.contributor.author	Allotey, F.K.A.
dc.date.accessioned	2021-10-27T09:05:01Z
dc.date.available	2021-10-27T09:05:01Z
dc.date.issued	2005
dc.identifier.issn	23105496
dc.identifier.uri	http://hdl.handle.net/123456789/6273
dc.description	18p:, ill.	en_US
dc.description.abstract	The propagation of ultrasound is studied in bulk GaN semiconductor in the presence of a strong, ac field oscillating at a frequency much higher than that of the ultrasound. Analytical expressions have been obtained for the attenuation coefficient (a) and the renormalized velocity (v) of the acoustic wave. It is shown that the dependencies of the ultrasonic absorption coefficient of the conduction electrons and the renormalized sound velocity on the field amplitude and the sound frequency have an oscillatory character which can be used to determine the effective mass and mobility of the material. The threshold field E ^ = 3.3xlO 2 VI cm needed to observe the oscillation is two orders smaller than that needed in the case of CdS	en_US
dc.language.iso	en	en_US
dc.publisher	University of Cape Coast	en_US
dc.title	Propagation of ultrasonic waves in bulk gallium nitride (gan) semiconductor in the presence of high-frequency electric field	en_US
dc.type	Article	en_US